DocumentCode :
656304
Title :
A nanosecond current pulse driver for light emitting diode
Author :
Tse-Ju Liao ; Yu-Chen Liu ; Chern-Lin Chen
Author_Institution :
Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2013
fDate :
3-6 Nov. 2013
Firstpage :
299
Lastpage :
303
Abstract :
High-intensity and short-duration light is necessary in many applications such as particle image velocimetry and light communication. Using nanosecond current pulse to drive LED or laser diode can generate such light to achieve higher efficiency. In nanosecond current pulse driver design, parasitic inductance effect is a big challenge. Parasitic inductance and voltage across it influence current change rate considerably. The proposed circuit uses source switching and current mirror topology to increase on/off speed of power MOSFET to achieve nanosecond current pulse. It reduces parasitic inductance effect and also overcomes the bandwidth limitation of conventional pulse current driver. Experiments show the proposed circuit provides 390mA current pulse with 40ns width.
Keywords :
driver circuits; inductance; light emitting diodes; power MOSFET; LED; current mirror topology; laser diode; light emitting diode; nanosecond current pulse driver; parasitic inductance effect; power MOSFET; source switching; Light emitting diodes; Logic gates; Modulation; Noise; Simulation; Switching circuits; Light emitting diode; oscillator; pulse current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future Energy Electronics Conference (IFEEC), 2013 1st International
Conference_Location :
Tainan
Print_ISBN :
978-1-4799-0071-8
Type :
conf
DOI :
10.1109/IFEEC.2013.6687520
Filename :
6687520
Link To Document :
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