A wideband Ka-band receiver front-end in 90-nm CMOS technology

Author

Zhiqun Li ; Jia Cao ; Qin Li ; Zhigong Wang

Author_Institution

Eng. Res. Center of RF-ICs & RF-Syst., Southeast Univ., Nanjing, China

fYear

2013

fDate

6-8 Oct. 2013

Firstpage

5

Lastpage

8

Abstract

This paper presents a Ka-band receiver front-end aimed for the Atacama Large Millimeter Array (ALMA) system using 90-nm LP CMOS technology. The front-end chip consists of a single-ended low-noise amplifier (LNA), a double-balanced mixer and a single-ended intermediate-frequency (IF) amplifier. The measured results show the chip achieves a conversion gain better than 29 dB for input frequencies between 30.5 to 40 GHz when driven with a fixed 30 GHz LO signal, a IIP3 around -25.4 dBm at 35 GHz and the LO-RF and LO-IF port isolation better than 65 dB in the 30-40 GHz frequency band under 1.2 V power supply. The chip size is 1.26 mm².

Keywords

CMOS analogue integrated circuits; low noise amplifiers; mixers (circuits); radioastronomy; ALMA system; Atacama large millimeter array; IF amplifier; LO-IF port isolation; LO-RF port isolation; LP CMOS technology; conversion gain; double-balanced mixer; frequency 30 GHz; frequency 30 GHz to 40 GHz; frequency 30.5 GHz to 40 GHz; front-end chip; low-noise amplifier; single-ended LNA; single-ended intermediate-frequency amplifier; size 90 nm; voltage 1.2 V; wideband Ka-band receiver front-end; Gain; Logic gates; Loss measurement; Mixers; Receivers; Substrates; Transistors; CMOS; Front-End; IF amplifier; Ka-band; Mixer; Receiver; wideband LNA;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6687771