DocumentCode
656548
Title
A MIM-cap free digitally tunable NMOS capacitor
Author
Thomas, Abu ; Bakalski, W. ; Ussmuller, Thomas ; Weigel, Robert
Author_Institution
Infineon Technol., RF & Protection Devices, Neubiberg, Germany
fYear
2013
fDate
6-8 Oct. 2013
Firstpage
21
Lastpage
24
Abstract
A novel approach of digitally tunable capacitors using only NMOS transistors of a Bulk-CMOS process is presented. Instead of using MIM-capacitors, stacked transistors are used to tune the capacitance value and have an additional low loss through mode. Using the 0.13 μm Bulk CMOS triple well process from Infineon Technologies, the device features a tuning range of 0.2 to 3.0 pF with a maximum Q of 90 at 900 MHz. The through mode shows an insertion loss of only 0.2 dB at 900 MHz. Including the MIPI control interface, voltage regulator and charge-pump, the Chip size is only 1100 μm × 900 μm. Current consumption is about 110 μA at 3.5V operation. The design is cost effective, as no MIM capacitances are required.
Keywords
CMOS integrated circuits; MOSFET; Q-factor; capacitors; integrated circuit design; Infineon Technologies; MIPI control interface; NMOS transistors; bulk CMOS triple well process; capacitance 0.2 pF to 3.0 pF; capacitance value; charge-pump; current 110 muA; digitally tunable capacitors; frequency 900 MHz; size 0.13 mum; stacked transistors; voltage 3.5 V; voltage regulator; Capacitance; Capacitors; Q-factor; Radio frequency; Switches; Switching circuits; Transistors; Antenna; Q.factor; adaptive matching; capacitance; transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2013 European
Conference_Location
Nuremberg
Type
conf
Filename
6687775
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