Title :
133GHz CMOS power amplifier with 16dB gain and +8dBm saturated output power for multi-gigabit communication
Author :
Katayama, Kengo ; Motoyoshi, Mizuki ; Takano, Kyoya ; Li Chen Yang ; Fujishima, Minoru
Author_Institution :
Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
Indoor communication is desired in CMOS millimeter-wave transceivers. To realize indoor communication, a power amplifier with a high RF output power without compromising gain, bandwidth or power efficiency is required. In this paper, a strategic design for gate width selection and matching-network optimization is introduced. A power amplifier is fabricated using a 40 nm CMOS technology process with a chip area of 0.30 mm2 and a power consumption of 89.1 mW at 1.1 V DC supply. Its peak gain is 16.8 dB at 133 GHz and its 3 dB bandwidth is 13.0 GHz. Its output-referred 1 dB compression point is 6.8 dBm, its saturated output power is 8.6 dBm and its peak power added efficiency is 7.4%. The performance of this power amplifier is evaluated using an indicator and it is confirmed that it has the best performance among power amplifiers over 100 GHz.
Keywords :
CMOS analogue integrated circuits; field effect MIMIC; indoor communication; millimetre wave power amplifiers; optimisation; CMOS millimeter-wave transceivers; CMOS power amplifier; CMOS technology process; efficiency 7.4 percent; frequency 133 GHz; gain 16 dB; gate width selection; indoor communication; matching-network optimization; multigigabit communication; power 89.1 mW; size 40 nm; voltage 1.1 V; Bandwidth; CMOS integrated circuits; Gain; Logic gates; Optimization; Power amplifiers; Power generation; ASK; CMOS; D-band; millimeter-wave;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2013 European
Conference_Location :
Nuremberg
