• DocumentCode
    656562
  • Title

    Dual band 18.5Gbps transmitter at 60GHz and 80GHz in 65nm CMOS

  • Author

    Rubin, Anat ; Socher, Eran

  • Author_Institution
    Sch. of Electr. Eng., Tel Aviv Univ., Tel Aviv, Israel
  • fYear
    2013
  • fDate
    6-8 Oct. 2013
  • Firstpage
    77
  • Lastpage
    80
  • Abstract
    A dual band transmitter implemented using a 65 nm CMOS technology at 60 GHz and 80 GHz is presented. A BPSK modulation scheme is used in each band realized by double balanced Gilbert cells, followed by output buffers and transformer-based diplexer. Output power of up to 5.5 dBm and 0 dBm were achieved in the low band (50-71 GHz) and high band (75-100 GHz), respectively. Limited by measurement equipment, BER<;10-12 was achieved concurrently at the two bands with data rates of up to 10 Gbps and 8.5 Gbps at the low and high bands, respectively. The design draws 150 mA from a 2 V supply and takes up a core area of 300*420 μm2.
  • Keywords
    CMOS integrated circuits; multiplexing equipment; phase shift keying; radio transmitters; BPSK modulation; CMOS technology; current 150 mA; double balanced Gilbert cells; dual band transmitter; frequency 50 GHz to 71 GHz; frequency 75 GHz to 100 GHz; measurement equipment; size 65 nm; transformer based diplexer; voltage 2 V; Binary phase shift keying; Bit error rate; CMOS integrated circuits; CMOS technology; Frequency measurement; Transmitters; 60 GHz; 80 GHZ; Active Mixer; BER; BPSK; CMOS; Gilbert; Transmitter;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuits Conference (EuMIC), 2013 European
  • Conference_Location
    Nuremberg
  • Type

    conf

  • Filename
    6687789