Characterization of a DC to 40 GHz SPDT switch based on GaAs mHEMT technology at cryogenic temperature

Author

Baldischweiler, Boris ; Bruch, Daniel ; Kallfass, I. ; Seelmann-Eggebert, Matthias ; Leuther, A. ; Peschel, Detlef ; Schlechtweg, Michael ; Ambacher, Oliver

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany

fYear

2013

fDate

6-8 Oct. 2013

Firstpage

141

Lastpage

144

Abstract

In this paper a DC to 40 GHz single pole double throw (SPDT) switch based on GaAs metamorphic high electron-mobility transistors (mHEMTs) is presented. Characterization is carried out at ambient temperature and at 15 K. The insertion loss from DC to 40 GHz is smaller than 2.2 dB and 1.5 dB at 295 K and 15 K, respectively. The isolation is better than 17 dB. The switch with a size of 1 × 1 mm² is dedicated to multi-purpose measurement setups at cryogenic temperature, but also operates at room temperature. Bias dependency, switch design and influence of illumination are discussed additionally.

Keywords

III-V semiconductors; field effect transistor switches; gallium arsenide; microwave switches; GaAs; SPDT switch characterization; bias dependency; cryogenic temperature; frequency 0 GHz to 40 GHz; illumination; mHEMT technology; metamorphic high electronmobility transistors; multipurpose measurement setups; single pole double throw switch; switch design; temperature 15 K; temperature 293 K to 298 K; Cryogenics; Insertion loss; Lighting; Switches; Switching circuits; Transistors; GaAs; MMIC; SPDT switch; cryogenic; low loss; mHEMT;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6687805