An asymmetrical 60–90 GHz single-pole double throw switch MMIC

Author

Dyskin, Aleksey ; Peleg, N. ; Wagner, Steffen ; Ritter, Daniel ; Kallfass, I.

Author_Institution

Electr. Eng. Dept., Technion - Israel Inst. of Technol., Haifa, Israel

fYear

2013

fDate

6-8 Oct. 2013

Firstpage

145

Lastpage

148

Abstract

We present the design and performance of a state-of-the-art broadband (60 to 90 GHz, 40%) millimeter-wave FET asymmetrical switch, realized in a metamorphic high electron mobility transistor (mHEMT) technology. The switch is dedicated to wireless communication or radiometry applications. It makes use of a single control voltage which simultaneously toggles between states. The two signal paths are asymmetrical, one using a series FET, the other a shunt-FET, and exhibit insertion losses of 2.8 and 1.7 dB, respectively. Broadband operation is achieved by introduction of matching stubs at each switch branch input.

Keywords

MMIC; high electron mobility transistors; microwave switches; millimetre wave transistors; broadband operation; frequency 60 GHz to 90 GHz; mHEMT technology; matching stubs; metamorphic high electron mobility transistor; millimeter-wave FET asymmetrical switch; radiometry; series FET; shunt-FET; single-pole double throw switch MMIC; wireless communication; Insertion loss; Ports (Computers); Radio frequency; Switches; Switching circuits; Transistors; Voltage control; Broadband; GaAs mHEMT; Single voltage; V-Band; W-Band; passive switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6687806