DocumentCode :
656579
Title :
An asymmetrical 60–90 GHz single-pole double throw switch MMIC
Author :
Dyskin, Aleksey ; Peleg, N. ; Wagner, Steffen ; Ritter, Daniel ; Kallfass, I.
Author_Institution :
Electr. Eng. Dept., Technion - Israel Inst. of Technol., Haifa, Israel
fYear :
2013
fDate :
6-8 Oct. 2013
Firstpage :
145
Lastpage :
148
Abstract :
We present the design and performance of a state-of-the-art broadband (60 to 90 GHz, 40%) millimeter-wave FET asymmetrical switch, realized in a metamorphic high electron mobility transistor (mHEMT) technology. The switch is dedicated to wireless communication or radiometry applications. It makes use of a single control voltage which simultaneously toggles between states. The two signal paths are asymmetrical, one using a series FET, the other a shunt-FET, and exhibit insertion losses of 2.8 and 1.7 dB, respectively. Broadband operation is achieved by introduction of matching stubs at each switch branch input.
Keywords :
MMIC; high electron mobility transistors; microwave switches; millimetre wave transistors; broadband operation; frequency 60 GHz to 90 GHz; mHEMT technology; matching stubs; metamorphic high electron mobility transistor; millimeter-wave FET asymmetrical switch; radiometry; series FET; shunt-FET; single-pole double throw switch MMIC; wireless communication; Insertion loss; Ports (Computers); Radio frequency; Switches; Switching circuits; Transistors; Voltage control; Broadband; GaAs mHEMT; Single voltage; V-Band; W-Band; passive switch;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2013 European
Conference_Location :
Nuremberg
Type :
conf
Filename :
6687806
Link To Document :
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