Title :
Multi octave wideband CMOS circulator using 0.11 um process
Author :
Se-mi Kim ; Yong-Hoon Kim
Author_Institution :
Sch. of Inf. & Mechatron., Gwangju Inst. of Sci. & Technol. (GIST), Gwangju, South Korea
Abstract :
A multi octave wide band, low noise 3-port CMOS circulator is proposed and implemented using 110 nm CMOS process. The circulator operates the frequency range from 0.25 GHz to 4 GHz with supply voltage of 3 V and -3 V. The measured insertion loss is 2 dB, return loss is better than 14 dB and isolation is more than 12 dB, respectively. The measured noise figure is from 7 to 10 dB over full frequency range.
Keywords :
CMOS integrated circuits; integrated circuit noise; CMOS process; frequency 0.25 GHz to 4 GHz; frequency range; insertion loss; low noise 3-port CMOS circulator; multi octave wideband CMOS circulator; noise figure; return loss; size 0.11 mum; supply voltage; CMOS integrated circuits; CMOS technology; Circulators; Insertion loss; Noise measurement; Radio frequency; Resistors; COMS circulator; bio radar; low noise; low voltage; wet road and dry road; wideband;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2013 European
Conference_Location :
Nuremberg
