Title :
Bow-tie-antenna-coupled terahertz detectors using AlGaN/GaN field-effect transistors with 0.25 micrometer gate length
Author :
Bauer, Matthias ; Lisauskas, Alvydas ; Boppel, S. ; Mundt, M. ; Krozer, V. ; Roskos, Hartmut G. ; Chevtchenko, Serguei ; Wurfl, Joachim ; Heinrich, Wolfgang ; Trankle, Gunther
Author_Institution :
Phys. Inst., Johann Wolfgang Goethe Univ., Frankfurt am Main, Germany
Abstract :
We report on the design and characterization of terahertz detection devices using field-effect transistors and on-chip broadband antennas. Experimental results from measurements on high-electron-mobility transistors fabricated with a AlGaN/GaN heterostructure are presented. Physical device parameters are extracted. The measured samples exhibit good noise-equivalent power (NEP) values at 0.6 THz of down to ~ 125 pW/√Hz. The responsivity is maximized by gate width. The best NEP value is found for the narrowest devices.
Keywords :
III-V semiconductors; aluminium compounds; bow-tie antennas; broadband antennas; gallium compounds; high electron mobility transistors; terahertz wave detectors; wide band gap semiconductors; AlGaN-GaN; NEP value; bow-tie-antenna-coupled terahertz detectors; field-effect transistors; frequency 0.6 THz; high-electron-mobility transistors; micrometer gate length; noise-equivalent power value; on-chip broadband antennas; physical device parameters; terahertz detection devices; Aluminum gallium nitride; Antennas; Detectors; Gallium nitride; HEMTs; Logic gates; AlGaN/GaN terahertz detectors; antenna-coupled high-electron-mobility transistors; high-responsivity devices; integrated field-effect transistors;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2013 European
Conference_Location :
Nuremberg
