Title :
A 164 GHz hetero-integrated source in InP-on-BiCMOS technology
Author :
Jensen, T. ; Al-Sawaf, T. ; Lisker, M. ; Glisic, Savo ; Elkhouly, Mohamed ; Kraemer, T. ; Ostermay, Ina ; Meliani, Chafik ; Tillack, Bernd ; Krozer, V. ; Heinrich, Wolfgang
Author_Institution :
Ferdinand-Braun-Inst. (FBH), Leibniz-Inst. fur Hochstfrequenztechnik, Berlin, Germany
Abstract :
A 164 GHz source in a hetero-integrated semiconductor technology is presented. It features a fundamental frequency voltage-controlled oscillator in BiCMOS, which is used to drive a doubler-amplifer chain in transferred-substrate InP-HBT technology, integrated on top of the BiCMOS wafer in a wafer-level Benzocyclobutene based bonding process. The VCO operates at 82 GHz with an output power of approximately 8 dBm. The combined circuit delivers 0 dBm at 164 GHz. Measured output power agrees well with simulations. The results demonstrate the feasibility of hetero-integrated circuits operating well above 100 GHz.
Keywords :
BiCMOS analogue integrated circuits; III-V semiconductors; bipolar MIMIC; heterojunction bipolar transistors; indium compounds; millimetre wave oscillators; voltage-controlled oscillators; BiCMOS wafer; InP; InP-HBT technology; InP-on-BiCMOS technology; bonding process; doubler-amplifer chain; frequency 164 GHz; frequency 82 GHz; fundamental frequency voltage-controlled oscillator; hetero-integrated circuits; hetero-integrated semiconductor technology; hetero-integrated source; transferred-substrate; wafer-level benzocyclobutene; BiCMOS integrated circuits; Harmonic analysis; Indium phosphide; Power generation; Power harmonic filters; Power measurement; Voltage-controlled oscillators; InP-on-BiCMOS; frequency doubler; hetero-integration; millimeter-wave circuits;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2013 European
Conference_Location :
Nuremberg
