A fully scalable compact small-signal modeling approach for 100 nm AlGaN/GaN HEMTs

Author

Schwantuschke, Dirk ; Seelmann-Eggebert, Matthias ; Bruckner, P. ; Quay, Ruediger ; Mikulla, Michael ; Ambacher, Oliver ; Kallfass, I.

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany

fYear

2013

fDate

6-8 Oct. 2013

Firstpage

284

Lastpage

287

Abstract

In this paper, we present a fully-scalable compact small-signal equivalent circuit model for AlGaN/GaN HEMTs with a gate length of 100 nm. The compact model yields a parasitic shell topology and is scalable from two up to eight transistor-fingers and is valid for finger lengths from 15 μm to 100 μm. It accurately covers the frequency range from 100 MHz up to at least 110 GHz and a wide range of bias utilized for typical class-AB operation points of this technology. Both, direct parameter extractions as well as optimization-based techniques were applied for the determination of the model parameters.

Keywords

aluminium compounds; equivalent circuits; gallium compounds; high electron mobility transistors; network topology; semiconductor device models; wide band gap semiconductors; HEMT; compact small-signal equivalent circuit model; compact small-signal modeling approach; direct parameter extractions; finger lengths; frequency 100 MHz to 110 MHz; frequency range; gate length; model parameters; optimization-based techniques; parasitic shell topology; size 100 nm; size 15 mum to 100 mum; transistor-fingers; typical class-AB operation points; Capacitance; Fingers; HEMTs; Integrated circuit modeling; Logic gates; MODFETs; 100 nm GaN; AlGaN/GaN-HEMT technology; Scalable model; compact small-signal model; equivilent circuit model; millimeter-wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6687841