Integral transform and state modeling of 0.1 µm AlGaN/GaN HEMTs for pulsed-RF and CW operation

A recent approach for low-frequency dispersion modeling of III-V FET devices using combined integral transform and state description is applied to an emerging AlGaN/GaN HEMT technology with a gatelength of 0.1 μm. The state-dependencies of the key parameters drain current, RF transconductance and output conductance, and the charge-control capacitances are derived from pulsed-RF S-parameter measurements. The model predicts the large-signal performance of the device for both CW and pulsed-RF operation with different quiescent bias settings. A sophisticated approach for the calculation of the low-frequency part of the drain current results in an improved PAE prediction of the model. In addition, analytic expressions are used for the nonlinear model functions instead of table-lookup for improved simulation speed and better convergence.