A 5Gb/s F-band ASK transmitter in 45nm LP CMOS

Author

Deferm, Noel ; Osorio, Juan F. ; de Graauw, Anton ; Reynaert, Patrick

Author_Institution

KU Leuven ESAT-MICAS, Leuven, Belgium

fYear

2013

fDate

6-8 Oct. 2013

Firstpage

296

Lastpage

299

Abstract

This paper presents an F-band direct digital ASK modulation transmitter. A high speed bias current modulator and a large bandwidth power amplifier are key building blocks in this system. The digital PRBS signal is generated by an on chip high speed 9-bit LFSR. A transmitted data rate of 5Gb/s is achieved and the measured peak output power is 6dBm at 110GHz. The peak LO to RF gain is 16dB. Total chip area is 0.5mm², the active RF area occupies 0.1mm² and the digital baseband measures 0.01mm².

Keywords

CMOS analogue integrated circuits; amplitude shift keying; millimetre wave power amplifiers; radio transmitters; F-band ASK transmitter; F-band direct digital ASK modulation transmitter; LP CMOS; RF gain; bandwidth power amplifier; bit rate 5 Gbit/s; digital PRBS signal; frequency 110 GHz; gain 16 dB; high speed bias current modulator; on chip high speed 9-bit LFSR; peak LO; peak output power; size 45 nm; transmitted data rate; Amplitude shift keying; Baseband; CMOS integrated circuits; Power amplifiers; Radio frequency; Transmitters; ASK; CMOS; F-band; differential design; mm-wave; power amplifier; transmitter;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6687844