94-GHz Load Pull measurements of SiGe HBT by extracting output power density in W-Band

Author

Hasnaoui, I. ; Canderle, E. ; Chevalier, P. ; Gloria, Daniel ; Gaquiere, Christopher

Author_Institution

Microwave Power Devices Group, IEMN, Villeneuve-d´Ascq, France

fYear

2013

fDate

6-8 Oct. 2013

Firstpage

400

Lastpage

403

Abstract

In this paper, we present a W-Band load pull test bench used to improve a characterization of Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT). High accuracy is obtained in Load-pull measurements at 94 GHz on last-generation SiGe HBTs by extracting the input reflection hot S-parameter (S´11), in order to understand the mechanisms of power behavior in the presence of millimeter-wave excitations. The device under test (0.12×4.9μm²) was characterized under large signal load pull showing attractive performance for power amplifier design. A state-of-the-art power density of 22.26 mW/μm² has been extracted at 94 GHz.

Keywords

Ge-Si alloys; S-parameters; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave power amplifiers; semiconductor materials; SiGe; W-Band load pull test bench; frequency 94 GHz; input reflection hot S-parameter; load pull measurement; millimeter-wave excitation; output power density; power amplifier design; power behavior; power density; signal load pull; silicon germanium HBT characterization; silicon germanium heterojunction bipolar transistor; Density measurement; Heterojunction bipolar transistors; Power amplifiers; Power generation; Power measurement; Silicon germanium; BiCMOS; Load Pull; SiGe HBTs; W-band; hot S-parameter;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2013 European

Conference_Location

Nuremberg

Type

conf

Filename

6687870