DocumentCode
656663
Title
Towards a large-signal noise model for GaN HEMT devices
Author
Rudolph, Matthias ; Doerner, Ralf
Author_Institution
Dept. of RF & Microwave Tech., Brandenburg Univ. of Technol., Cottbus, Germany
fYear
2013
fDate
6-8 Oct. 2013
Firstpage
484
Lastpage
487
Abstract
This paper proposes a bias-dependent description of the HEMT noise sources that is optimized with respect to implementation in large-signal compact models. The noise is described as a function of drain current instead of small-signal parameters like the transconductance in order to maintain consistency between the small-signal and large-signal world.
Keywords
III-V semiconductors; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; GaN HEMT devices; HEMT noise sources; bias-dependent description; drain current; large-signal noise model; Gallium nitride; HEMTs; Integrated circuit modeling; Microwave circuits; Microwave transistors; Noise; MODFETs; noise; semiconductor device modeling; semiconductor device noise modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2013 European
Conference_Location
Nuremberg
Type
conf
Filename
6687891
Link To Document