DocumentCode :
656848
Title :
Investigations of surface properties of SiO2 and Si3N4 thin layers, used for MEMS vibrating structures applications
Author :
Voicu, Ramiro ; Obreja, Cosmin ; Gavrila, R. ; Muller, Rudolf ; Rymuza, Zygmund ; Michalowski, Marcin
Author_Institution :
Modelling & Comput.-Aided Design Lab., IMT Bucharest, Bucharest, Romania
Volume :
1
fYear :
2013
fDate :
14-16 Oct. 2013
Firstpage :
111
Lastpage :
114
Abstract :
To understand the surface topography of MEMS vibrating structures, different effects as contact phenomena, stiction, friction, adhesion, etc, on the lifetime and performance of these devices, require special consideration. We obtained results regarding the topographic analyses of 3 different experimental samples, using the same design, but different materials for manufacturing, specific to MEMS technology. Three different test methods were performed on three separate types of samples. The samples were fabricated as following: Silicon, Silicon Oxide layer on Silicon and Silicon Nitride layer on a Silicon Oxide layer on Silicon. In order to measure their properties a topography scan, a comparative friction test and a pull off-force measurement were carried out using an Atomic Force Microscope (AFM).
Keywords :
atomic force microscopy; micromachining; micromechanical devices; silicon compounds; surface topography; vibrations; MEMS vibrating structures applications; Si3N4; SiO2; atomic force microscope; comparative friction test; pull off force measurement; surface properties; surface topography; thin layers; topographic analyses; Force; Friction; Micromechanical devices; Pollution measurement; Silicon; Surface topography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2013 International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4673-5670-1
Electronic_ISBN :
1545-827X
Type :
conf
DOI :
10.1109/SMICND.2013.6688104
Filename :
6688104
Link To Document :
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