• DocumentCode
    656850
  • Title

    Silicon plasma processing for antireflective micro — Textured surfaces with applications for solar cells

  • Author

    Rebigan, Roxana ; Avram, Andrei ; Craciunoiu, F. ; Tomescu, Roxana ; Budianu, Elena ; Purica, Munizer ; Popescu, Mihail

  • Author_Institution
    Nat. Inst. for R&D in Microtechnol., Bucharest, Romania
  • Volume
    1
  • fYear
    2013
  • fDate
    14-16 Oct. 2013
  • Firstpage
    119
  • Lastpage
    122
  • Abstract
    In this paper we present the fabrication of antireflective micro-textured silicon surfaces using ICP (Plasmalab System 100 from Oxford Instruments) dry etching processes for silicon pillars (cylinders, clepsydra, needles). Different etching profiles, sizes and shapes have been obtained through the variation of plasma parameters: pressure, gas debit, etching chemical species. The silicon pillars lower the losses by surface reflection of incident radiation and increase the optical active region of the solar cell, hence increasing device´s conversion efficiency. The influence of pillars with various profiles, forms, sizes and heights has been investigated by recording the reflectance spectra on the silicon textured wafers in the spectral range of 200 ÷ 900 nm using UV_VIS_NIR spectrophotometer. The spectra analysis has shown that the reflectivity of the textured silicon surface using pillars has decreased to 10%-15% compared with the value of 35% for the silicon untextured surface, in the spectral range 400 nm _ 1000 nm. To control and verify the etching rate and the shape of the structures, we used SEM imaging and characterization.
  • Keywords
    etching; infrared spectroscopy; plasma materials processing; scanning electron microscopy; silicon; solar cells; ultraviolet spectroscopy; ICP; Oxford Instruments; Plasmalab System 100; SEM characterization; SEM imaging; Si; UV_VIS_NIR spectrophotometer; antireflective microtextured silicon surfaces; clepsydra; cylinders; dry etching processes; etching chemical species; etching profiles; etching rate; gas debit; incident radiation; needles; plasma parameters; reflectance spectra; reflectivity; silicon pillars; silicon plasma processing; silicon untextured surface; solar cells; spectra analysis; surface reflection; Etching; Needles; Photovoltaic cells; Reflectivity; Silicon; Surface texture; ICP plasma processing; silicon surface texturization; solar cell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2013 International
  • Conference_Location
    Sinaia
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4673-5670-1
  • Electronic_ISBN
    1545-827X
  • Type

    conf

  • DOI
    10.1109/SMICND.2013.6688106
  • Filename
    6688106