DocumentCode
656852
Title
Effects of the preparation conditions and furnace annealing on the structure and morphology of Zn0.8 Cd0.2 Se thin films
Author
Bineva, I. ; Nesheva, D. ; Aneva, Z. ; Levi, Zohar ; Dinescu, Adrian ; Danila, M. ; Muller, Rudolf
Author_Institution
Inst. of Solid State Phys., Sofia, Bulgaria
Volume
1
fYear
2013
fDate
14-16 Oct. 2013
Firstpage
129
Lastpage
132
Abstract
Single layers of Zn0.8Cd0.2Se were prepared by thermal vacuum evaporation at room substrate temperature. Two groups of samples with the same composition were produced by applying consecutive deposition of ZnSe and CdSe sublayers with nominal thickness of 0.12 and 0.37 or 0.08 and 0.23 nm, respectively. Atomic Force Microscopy (AFM), Scanning Electon Microscopy (SEM) and X-ray diffraction (XRD) measurements were performed to explore the evolution of the crystal structure, microstructure, composition and surface morphology with the change of preparation conditions and upon furnace annealing of Zn0.8Cd0.2Se thin films (400nm) with various sublayer thickness at 673 K in an inert atmosphere. It has been found that as-deposited films were nanocrystalline with a grain size less than or around 5 nm and cubic structure. The variation of the sublayer thickness does not appreciably affect the film crystal structure and composition. Upon annealing the cubic structure is preserved, the average nanocrystals size increased and root mean square roughness strongly decreases.
Keywords
II-VI semiconductors; X-ray diffraction; annealing; atomic force microscopy; cadmium compounds; grain size; scanning electron microscopy; semiconductor growth; semiconductor thin films; surface morphology; surface roughness; vacuum deposition; wide band gap semiconductors; zinc compounds; AFM; SEM; X-ray diffraction; XRD; Zn0.8Cd0.2Se; atomic force microscopy; crystal structure; deposition; film thickness; furnace annealing; grain size; microstructure; morphology; nanocrystals size; root mean square roughness; scanning electon microscopy; size 0.08 nm to 0.37 nm; structural properties; sublayer thickness; surface morphology; temperature 293 K to 298 K; temperature 673 K; thermal vacuum evaporation; thin films; Annealing; Films; Grain size; Morphology; Substrates; Surface morphology; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2013 International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4673-5670-1
Electronic_ISBN
1545-827X
Type
conf
DOI
10.1109/SMICND.2013.6688110
Filename
6688110
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