Terahertz emission and detection using two dimensional plasmons in semiconductor nano-heterostructures for sensing applications

Author

Otsuji, Taiichi ; Watanabe, Toshio ; Tombet, S. Boubanga ; Suemitsu, Tetsuya ; Ryzhii, Victor ; Popov, V. ; Knap, Wojciech

Author_Institution

Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan

fYear

2013

fDate

3-6 Nov. 2013

Firstpage

1

Lastpage

4

Abstract

This paper reports on emission and detection of terahertz radiation using two dimensional (2D) plasmons in semiconductor nano-heterostructures for sensing applications. The device structure is based on a high-electron mobility transistor and incorporates the authors´ original asymmetrically interdigitated dual-grating gates. Excellent terahertz emission and detection performances are experimentally demonstrated by using InAlAs/InGaAs/InP heterostructure material systems. Their applications to nondestructive material evaluation based on terahertz imaging are also presented.

Keywords

III-V semiconductors; diffraction gratings; gallium arsenide; high electron mobility transistors; indium compounds; nanosensors; nanostructured materials; nondestructive testing; plasmonics; terahertz wave detectors; terahertz wave generation; terahertz wave imaging; InAlAs-InGaAs-InP; asymmetrically interdigitated dual grating gate; high electron mobility transistor; nondestructive material evaluation; semiconductor nanoheterostructure; sensing application; terahertz detection; terahertz emission; terahertz imaging; two dimensional plasmon; Detectors; HEMTs; Imaging; Logic gates; MODFETs; Plasmons;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2013 IEEE

Conference_Location

Baltimore, MD

ISSN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2013.6688150

Filename

6688150