Title :
Fully integrated System-On Chip gas sensor in CMOS technology
Author :
Gamauf, C. ; Siegele, M. ; Nemecek, A. ; Mutinati, Giorgio C. ; Steinhauer, Stephan ; Brunet, Elise ; Kock, Alexander ; Kraft, J. ; Siegert, Joerg ; Schrank, Franz
Author_Institution :
Dept. of Micro- & Nanosyst., Univ. of Appl. Sci. Wiener Neustadt, Wiener Neustadt, Austria
Abstract :
Within this work the development of an integrated gas sensor as System-On Chip (SOC) in a 0.35μm standard CMOS process plus CMOS compatible SnO2-deposition and Si-release steps is presented. The SnO2 layer provides high gas sensitivity to 10ppm for CO in humid air. An optimized Micro-Hotplate (μHP) consisting of a fully released membrane with a poly-Si heater in the oxide stack is designed. Due to the small area of AμHP=100×100μm2 and the switched capacitor temperature controller, low power consumption Pel=24mW at high temperatures T=400°C and short rise time of inîe=11.8ms are achieved. The differential setup contains sense and dummy sensors in order to compensate drift and tolerances. The readout stage consists of a gain adjustable amplifier with digital offset compensation and shows a relative error e<;±1%. The complete multichannel chip carries six sensors at a size Achip=3.4×2.4mm2, a power consumption Pchip=180mW and is well suited for various low power gas sensing applications.
Keywords :
CMOS integrated circuits; elemental semiconductors; gas sensors; membranes; power consumption; silicon; system-on-chip; tin compounds; CMOS technology; Si; Si-release steps; SnO2; SnO2 deposition; digital offset compensation; fully integrated system-on chip gas sensor; fully released membrane; gain adjustable amplifier; gas sensitivity; humid air; optimized microhotplate; oxide stack; power 24 mW; power consumption; readout stage; size 0.35 mum; switched capacitor temperature controller; temperature 400 degC; CMOS integrated circuits; Gas detectors; Power demand; Temperature control; Temperature measurement; Temperature sensors;
Conference_Titel :
SENSORS, 2013 IEEE
Conference_Location :
Baltimore, MD
DOI :
10.1109/ICSENS.2013.6688155