MEMS disk resonator gyroscope with integrated analog front-end

Author

Su, T.-H. ; Nitzan, Sarah ; Taheri-Tehrani, P. ; Kline, Mitchell ; Boser, Bernhard ; Horsley, David A.

Author_Institution

Electr. & Comput. Eng., Univ. of California, Davis, Davis, CA, USA

fYear

2013

fDate

3-6 Nov. 2013

Firstpage

1

Lastpage

4

Abstract

We present a 2 mm diameter, 35 μm thick disk resonator gyro (DRG) fabricated in <;111> silicon with integrated 0.35 μm CMOS analog front-end circuits in the Invensense NF process. This process incorporates a wafer-level vacuum seal, yielding a quality factor (Q) of 2800 at the DRG´s 78 kHz resonance frequency. After performing electrostatic tuning to enable mode-matched operation, this DRG achieves a 63 μV/°/s sensitivity. Resonator vibration in the sense and drive axes is sensed using capacitive transduction, and amplified using a low-noise, on-chip integrated circuit. This allows the DRG to achieve Brownian noise-limited performance. The angle random walk (ARW) is measured to be 0.01 (*/sec)/√Hz and the bias instability is 30 °/hr.

Keywords

CMOS analogue integrated circuits; Q-factor; circuit stability; gyroscopes; micromechanical resonators; vibrations; ARW; Brownian noise-limited performance; CMOS analog front-end circuits; DRG; MEMS disk resonator gyroscope; angle random walk; bias instability; capacitive transduction; electrostatic tuning; frequency 78 kHz; integrated analog front-end; invensense NF process; mode-matched operation; on-chip integrated circuit; quality factor; resonance frequency; resonator vibration; size 0.35 mum; size 2 mm; size 35 mum; wafer-level vacuum seal; Electrodes; Electrostatics; Micromechanical devices; Noise; Noise measurement; Resonant frequency; Tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2013 IEEE

Conference_Location

Baltimore, MD

ISSN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2013.6688164

Filename

6688164