Sub-1G MEMS accelerometer

Author

Yamane, Daisuke ; Konishi, Tsuyoshi ; Matsushima, Takaaki ; Motohashi, G. ; Kagaya, K. ; Ito, H. ; Ishihara, Noboru ; Toshiyoshi, Hiroshi ; Machida, Kenji ; Masu, Kazuya

Author_Institution

Solution Res. Lab., Tokyo Inst. of Technol., Yokohama, Japan

fYear

2013

fDate

3-6 Nov. 2013

Firstpage

1

Lastpage

4

Abstract

This paper reports a sub-1G detectable MEMS accelerometer formed by the multilayer metal intended for post-CMOS process. High density of gold enables to minimize the footprint of the proof mass without compromising the sensitivity subjected to thermal-mechanical noise. The requirements of a low-G accelerometer have been studied in terms of the fabrication process and the device structure. The Brownian noise of the accelerometer is designed to be 2.24 μg/√Hz (at RT) for a proof mass of 1020 μm × 1020 μm × 12 μm, and the estimated actual value is 5.44 μg/√Hz. Sub-1G sensing has also been demonstrated by measuring the capacitance shift as a function of the input acceleration.

Keywords

accelerometers; microfabrication; microsensors; noise; Brownian noise; MEMS accelerometer; device structure; fabrication process; low-G accelerometer; multilayer metal; postCMOS process; thermal-mechanical noise; Acceleration; Accelerometers; Capacitance measurement; Micromechanical devices; Noise; Semiconductor device measurement; Sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2013 IEEE

Conference_Location

Baltimore, MD

ISSN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2013.6688166

Filename

6688166