Title :
InN nanowires based multi-modal environmental sensors
Author :
Wilson, Aswathy ; Jahangir, Ifat ; Quddus, Ehtesham B. ; Singh, A.K. ; Koley, Goutam
Author_Institution :
Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
Abstract :
High quality InN nanowires (NWs) have been investigated for sensing applications. The NWs were synthesized using a novel approach that enhanced the cracking of NH3 precursor and dramatically improving the growth rate and material quality. Field effect transistors (FETs) based on these high quality InN NWs showed excellent electrical characteristics and good average mobility (270 cm2/Vs). Preliminary sensing results for dilute acetone, diluted water vapor and NO2 at various concentrations are very encouraging. Because of high carrier density and mobility, these NWs are also good candidates for field emission based sensing. During the field emission experiments, sharp change in NW current was observed when supplied voltage increased to 2 V for ~1μm distance between NW and plate, demonstrating the suitability of these NWs for gaseous detection based on the field emission method, and for multimodal sensing in combination with FET based sensing method.
Keywords :
carrier density; carrier mobility; cracks; environmental factors; field effect transistors; field emission; gas sensors; indium compounds; nanofabrication; nanosensors; nanowires; nitrogen compounds; organic compounds; sensor fusion; FET; InN; NO2; NW; carrier density; carrier mobility; cracking; dilute acetone; diluted water vapor; field effect transistor; field emission based sensing; gaseous detection; material quality; multimodal environmental sensor; nanowire; precursor; voltage 2 V; Field effect transistors; Gold; Logic gates; Nanowires; Sensors; Threshold voltage; Tunneling; InN; field emission; nanowires; sensors;
Conference_Titel :
SENSORS, 2013 IEEE
Conference_Location :
Baltimore, MD
DOI :
10.1109/ICSENS.2013.6688187
