Magnetic Tunnel Junction (MTJ) sensors for integrated circuits (IC) electric current measurement

Author

Cubells, M.D. ; Reig, Candid ; De Marcellis, A. ; Roldan, A. ; Roldan, J.-B. ; Cardoso, Susana ; Freitas, P.P.

Author_Institution

Dept. Electron. Eng., Univ. of Valencia, Burjassot, Spain

fYear

2013

fDate

3-6 Nov. 2013

Firstpage

1

Lastpage

4

Abstract

We report on MgO Magnetic Tunnel Junction (MTJ) devices focusing on their potential application in the measurement of electrical current at the integrated circuit level. Single devices and full bridges have been specifically developed for this purpose. A sort of different designs regarding their geometry arrangement as well as the number of constitutive elements have been tested. Experimental characterization has been performed and results including impedance and sensitivity measurements are given.

Keywords

buffer circuits; electric current measurement; electric impedance measurement; integrated circuits; magnesium compounds; magnetic sensors; magnetic tunnelling; MTJ sensor; MgO; electric current measurement; full bridge; geometry arrangement; impedance measurement; integrated circuit; magnetic tunnel junction; sensitivity measurement; Bridge circuits; Current measurement; Integrated circuits; Magnetic sensors; Magnetic tunneling; Sensitivity; GMR; MTJ; electrical current sensing; integrated circuits; sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2013 IEEE

Conference_Location

Baltimore, MD

ISSN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2013.6688219

Filename

6688219