DocumentCode :
656999
Title :
Detecting Volatile Organic Compounds in the ppb range with platinum-gate SiC-Field Effect Transistors
Author :
Bur, C. ; Andersson, Mats ; Lloyd Spetz, A. ; Helwig, N. ; Schutze, Andreas
Author_Institution :
Dept. of Phys., Chem. & Biol., Linkoping Univ., Linkoping, Sweden
fYear :
2013
fDate :
3-6 Nov. 2013
Firstpage :
1
Lastpage :
4
Abstract :
In this work, the use of a platinum gate gas-sensitive SiC Field Effect Transistor (SiC-FET) was studied for the detection of low concentrations of hazardous Volatile Organic Compounds (VOC). For this purpose, a new gas mixing system was built providing VOCs down to sub-ppb levels by permeation ovens and gas pre-dilution. Measurements have shown that benzene, naphthalene and formaldehyde can be detected in the ppb range and indicate a detection limit of 1-2 ppb for benzene and naphthalene. The sensitivity is high with a response of 5.5 mV for 10 ppb naphthalene in a humid atmosphere (at 20% relative humidity) and with additional 2 ppm ethanol the response to naphthalene was still 1.3 mV. Formaldehyde can be detected down to approximately 100 ppb under humid conditions. This is the first time that a metal gated SiC-FET was used to detect hazardous VOCs in the low ppb range making SiC-FETs suitable candidates for indoor air quality applications.
Keywords :
field effect transistors; gas sensors; organic compounds; platinum; silicon compounds; wide band gap semiconductors; SiC-Pt; benzene; ethanol; formaldehyde; gas mixing system; gas pre-dilution; hazardous volatile organic compound detection; naphthalene; permeation ovens; platinum-gate SiC-field effect transistors; ppb range; Ethanol; Gas detectors; Logic gates; Sensitivity; Temperature sensors; Transistors; Volatile organic compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SENSORS, 2013 IEEE
Conference_Location :
Baltimore, MD
ISSN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2013.6688279
Filename :
6688279
Link To Document :
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