Magnetic flux modulation with a piezoelectric silicon bridge for 1/f noise reduction in magnetoresistive sensors

Author

Jiafei Hu ; Wugang Tian ; Hongfeng Pang ; Jianqiang Zhao ; Wenyin Li ; Dixiang Chen ; Mengchun Pan

Author_Institution

Coll. of Mechatron. & Autom., Nat. Univ. of Defense Technol., Changsha, China

fYear

2013

fDate

3-6 Nov. 2013

Firstpage

1

Lastpage

4

Abstract

Magnetoresistive sensors have plenty of applications in magnetic sensing areas, but magnetic and nonmagnetic 1/f noise severely degrades their low-frequency performances, especially detection sensitivity with hundreds of loss. In this paper, vertical motion flux modulation scheme with a piezoelectric silicon bridge is recommended for 1/f noise reduction, due to its effectiveness, simplicity and stability as well as moderate modulation efficiency. In our prototype sensor, the detection sensitivity was greatly improved to ~80 pT /√Hz at 1 Hz, which was near 300 times upgraded, when the detected magnetic field was transferred up to the resonance frequency of the piezoelectric silicon bridge.

Keywords

1/f noise; crystal resonators; lead compounds; magnetic flux; magnetic sensors; magnetoresistive devices; prototypes; silicon; 1/f noise reduction; PZT-Si; detection sensitivity; frequency 1 Hz; magnetic flux modulation; magnetoresistive sensors; moderate modulation efficiency; piezoelectric silicon bridge; resonance frequency; vertical motion flux modulation scheme; Bridge circuits; Magnetic flux; Magnetic sensors; Modulation; Prototypes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2013 IEEE

Conference_Location

Baltimore, MD

ISSN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2013.6688288

Filename

6688288