Channel length dependent sensor response of Schottky-barrier FET pH sensors

Author

Pregl, Sebastian ; Zorgiebel, Felix ; Baraban, Larysa ; Cuniberti, Gianaurelio ; Mikolajick, Thomas ; Weber, W. ; Mikolajick, Thomas

Author_Institution

Max Bergmann Center of Biomater., Tech. Univ. Dresden, Dresden, Germany

fYear

2013

fDate

3-6 Nov. 2013

Firstpage

1

Lastpage

4

Abstract

We present a multi channel Schottky-barrier (SB) field effect transistor (FET) based platform for chemical sensor applications and investigate its sensitivity on channel length. Designed transistors consist of parallel assembled bottom up grown silicon nanowires with a mean diameter of 20 nm. Focusing on investigations of devices with different channel lengths, we demonstrate that different optimum sensing regimes exist and they are determined by the device geometry. These target at different realizations and operation schemes. The sensitivities of the SB-FETs in linear and subthreshold regime are extracted from analysis of the pH response of silicon nanowire sensor devices.

Keywords

Schottky barriers; Schottky gate field effect transistors; chemical sensors; nanosensors; nanowires; pH measurement; silicon; Schottky barrier FET pH sensors; Si; channel length dependent sensor; chemical sensor; field effect transistor; multichannel Schottky barrier; optimum sensing; silicon nanowire sensor; size 20 nm; Electrodes; Field effect transistors; Logic gates; Nanowires; Sensitivity; Silicon; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2013 IEEE

Conference_Location

Baltimore, MD

ISSN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2013.6688311

Filename

6688311