DocumentCode :
657163
Title :
Pt-functionalized graphene/Si heterostructure for hydrogen sensing
Author :
Uddin, Muhammad Athar ; Singh, Ashutosh ; Sudarshan, Tsb ; Koley, Goutam
Author_Institution :
Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
fYear :
2013
fDate :
3-6 Nov. 2013
Firstpage :
1
Lastpage :
4
Abstract :
In this work, H2 sensing by graphene/Si Schottky diode with Pt functionalization has been demonstrated. Both p-and n-Si/graphene Schottky devices showed conductivity change in presence of H2 molecules in ambient conditions at room temperature. Successful detection of 10 ppm H2 in air has been demonstrated. Performance enhancement compared to the Pt-functionalized just graphene based sensor is validated by the response obtained from both device types fabricated on the same chip. Seven fold increase in sensitivity in H2 sensing has been obtained for graphene/Si devices compared to the simple graphene sensor in ambient condition.
Keywords :
Schottky diodes; chemical sensors; elemental semiconductors; graphene; hydrogen; platinum; silicon; H; Pt-C-Si; Pt-functionalized graphene-Si heterostructure; Schottky diode device; hydrogen sensing; temperature 293 K to 298 K; Conductivity; Copper; Graphene; Hydrogen; Schottky diodes; Sensors; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SENSORS, 2013 IEEE
Conference_Location :
Baltimore, MD
ISSN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2013.6688449
Filename :
6688449
Link To Document :
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