• DocumentCode
    657163
  • Title

    Pt-functionalized graphene/Si heterostructure for hydrogen sensing

  • Author

    Uddin, Muhammad Athar ; Singh, Ashutosh ; Sudarshan, Tsb ; Koley, Goutam

  • Author_Institution
    Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
  • fYear
    2013
  • fDate
    3-6 Nov. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this work, H2 sensing by graphene/Si Schottky diode with Pt functionalization has been demonstrated. Both p-and n-Si/graphene Schottky devices showed conductivity change in presence of H2 molecules in ambient conditions at room temperature. Successful detection of 10 ppm H2 in air has been demonstrated. Performance enhancement compared to the Pt-functionalized just graphene based sensor is validated by the response obtained from both device types fabricated on the same chip. Seven fold increase in sensitivity in H2 sensing has been obtained for graphene/Si devices compared to the simple graphene sensor in ambient condition.
  • Keywords
    Schottky diodes; chemical sensors; elemental semiconductors; graphene; hydrogen; platinum; silicon; H; Pt-C-Si; Pt-functionalized graphene-Si heterostructure; Schottky diode device; hydrogen sensing; temperature 293 K to 298 K; Conductivity; Copper; Graphene; Hydrogen; Schottky diodes; Sensors; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SENSORS, 2013 IEEE
  • Conference_Location
    Baltimore, MD
  • ISSN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2013.6688449
  • Filename
    6688449
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=657163