Tunable graphene/Indium Nitride heterostructure diode sensor

Author

Wilson, Aswathy ; Jahangir, Ifat ; Singh, A.K. ; Sbrockey, N. ; Coleman, E. ; Tompa, G.S. ; Koley, Goutam

Author_Institution

Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA

fYear

2013

fDate

3-6 Nov. 2013

Firstpage

1

Lastpage

4

Abstract

In this work, a graphene/InN thin film heterostructure based diode sensor is demonstrated. InN thin film is grown on GaN/sapphire substrate, and CVD grown graphene is then transferred on the device to make a graphene/InN diode structure. Electrical characterization of the device shows good rectifying behavior across the graphene/InN heterojunction. Preliminary experiments with trace amount of water and acetone vapors and NO₂ gas show highly promising results. It is observed that this sensor offers better sensitivity than simple graphene or InN based conductometric sensors, primarily because of the presence of a tunable Schottky barrier formed between graphene and InN that can be modulated by different analyte gas molecules.

Keywords

III-V semiconductors; Schottky diodes; gas sensors; graphene; indium compounds; nitrogen compounds; rectifying circuits; wide band gap semiconductors; C-InN; NO₂; acetone vapor; electrical characterization; heterostructure diode sensor; rectifying behavior; thin film heterostructure; tunable Schottky barrier; tunable diode sensor; water vapor; Gases; Graphene; Heterojunctions; Indium; Sensitivity; Sensors; Graphene; InN thin film; gas sensing; heterostructure;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2013 IEEE

Conference_Location

Baltimore, MD

ISSN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2013.6688451

Filename

6688451