A CMOS-compatible metamaterial to enhance the front to back radiation ratio in terahertz antenna for sensing application

Author

Fiorentino, G. ; Syed, Waqas ; Santagata, F. ; Spirito, M. ; Pandraud, G. ; Neto, Augusto ; Sarro, P.M. ; Adam, A.J.L.

Author_Institution

DIMES, ECTM, Tech. Univ. Delft, Delft, Netherlands

fYear

2013

fDate

3-6 Nov. 2013

Firstpage

1

Lastpage

4

Abstract

Here we report for the first time the fabrication of a high aspect ratio, IC compatible metamaterial that greatly enhances the sensing performance of antennas in the Terahertz frequency. The metamaterial is realized by means of multilayered periodic metallic inclusions inside a thick dielectric host matrix. When placed on top of the radiating structure, this metamaterial increases the front-to-back radiation ratio by more than 10 dB, ensuring the matching of the antenna from 280 to 325 GHz. The maximum temperature reached during fabrication is 400°C, thus making this approach suited as CMOS back-end process.

Keywords

CMOS integrated circuits; matrix algebra; microwave antennas; terahertz metamaterials; terahertz wave detectors; CMOS back-end process; IC CMOS-compatible metamaterial; frequency 280 GHz to 325 GHz; front to back radiation ratio enhancement; high aspect ratio; multilayered periodic metallic inclusion; radiating structure; sensing application; temperature 400 degC; terahertz antenna matching; thick dielectric host matrix; Dielectrics; Metals; Metamaterials; Silicon; Slot antennas; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2013 IEEE

Conference_Location

Baltimore, MD

ISSN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2013.6688503

Filename

6688503