DocumentCode
657284
Title
Deep NLD plasma etching of Fused Silica and Borosilicate Glass
Author
Ahamed, Mohammed J. ; Senkal, Doruk ; Trusov, Alexander A. ; Shkel, Andrei M.
Author_Institution
Microsyst. Lab., Univ. of California, Irvine, Irvine, CA, USA
fYear
2013
fDate
3-6 Nov. 2013
Firstpage
1
Lastpage
4
Abstract
In this paper, we report development of deep plasma etching process for Fused Silica (FS) and Borosilicate Glass (BSG) using magnetic Neutral Loop Discharge (NLD) plasma, achieving a depth of 100 μm, a high aspect ratio of 8:1, nearly vertical walls, and etch rate as high as 0.75 μm/min. The plasma conditions, such as gas flow, power, pressure, and masking materials were experimentally analyzed and optimized for improved aspect ratio, selectivity, sidewall angle, etch rate, and etch quality. The design of experiment with etching parameters and variation in masking materials provides a systematic approach to the fabrication of sensors, resonators and microsystems using FS and BSG.
Keywords
borosilicate glasses; design of experiments; discharges (electric); masks; microfabrication; micromechanical resonators; microsensors; photoresists; sputter etching; B2O3-SiO2; SiO2; aspect ratio; borosilicate glass; deep NLD plasma etching; etch quality; etch rate; fused silica; gas flow; magnetic neutral loop discharge plasma; masking materials; microsystems; plasma power; plasma pressure; resonators; selectivity; sensors; sidewall angle; Etching; Glass; Nickel; Plasmas; Rough surfaces; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
SENSORS, 2013 IEEE
Conference_Location
Baltimore, MD
ISSN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2013.6688574
Filename
6688574
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