TiOx memristors with variable turn-on voltage using field-effect for non-volatile memory

This work demonstrates the first use of field-effect based memristors that exhibit variable turn-on voltage. Turn-on voltage as low as 4V is achieved in this work and the switching characteristics is reproducible. The novelty of this work compared to earlier work based on metal-insulator-metal (MIM) structure is in introducing an auxiliary electrode to the MIM structure that produces variation in the turn-on voltage of the device through field effect. A gate bias of ±2V varies the drain-source turn-on voltage by ±2V around the turn-on voltage at zero gate bias. The simplicity in the device structure can allow easy integration to form an array of these devices to constitute a memory module. The leakage current in the off state is less than 10pA, which would enable low power operation and long hours of data storage.