SiGe wideband power detector and IF-amplifier RFICs for W-band passive imaging systems

Author

Jonsson, R. ; Samuelsson, C. ; Reyaz, S. ; Malmqvist, R. ; Gustafsson, A. ; Kaynak, Mehmet ; Rydberg, A.

Author_Institution

Swedish Defence Res. Agency (FOI), Linkoping, Sweden

Volume

2

fYear

2013

fDate

14-16 Oct. 2013

Firstpage

225

Lastpage

228

Abstract

This paper presents the results of some W-band power detector and wideband (IF) amplifier circuit designs made in 0.25 μm and 0.13 μm SiGe BiCMOS processes. Two 0.25 μm SiGe wideband power detector and amplifier RFICs present an NEP =1-2 pW/Hz^1/2 at 85-101 GHz and s₂₁=10-19 dB at 2-32 GHz, respectively. To the authors´ knowledge, the proposed SiGe detector design reports the widest Sn bandwidth (s₁₁≤ -10 dB 84-104 GHz) among SiGe based W-band detectors. Two 0.13 μm SiGe detector/amplifier circuits show a simulated NEP=0.2-0.9 pW/Hz^1/2 at 75-100 GHz and S₂₁= 19-21 dB at 5-30 GHz. The presented SiGe power detectors and (IF) amplifiers are targeting broadband applications such as passive imaging.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; intermediate-frequency amplifiers; millimetre wave imaging; millimetre wave integrated circuits; IF amplifier circuit design; IF-amplifier RFIC; W-band passive imaging systems; W-band power detector; broadband application; detector-amplifier circuits; frequency 2 GHz to 32 GHz; frequency 75 GHz to 101 GHz; passive imaging; silicon germanium BiCMOS process; silicon germanium wideband power detector; size 0.13 mum; size 0.25 mum; wideband amplifier circuit designs; BiCMOS integrated circuits; Detectors; Gain; Imaging; Receivers; Silicon germanium; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2013 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4673-5670-1

Electronic_ISBN

1545-827X

Type

conf

DOI

10.1109/SMICND.2013.6688662

Filename

6688662