Title :
Local lifetime engineering in 600V pin diode using mix-mode simulation
Author :
Hsieh, Alice Pei-Shan ; Udrea, F. ; Chen, Mei
Author_Institution :
Dept. of Eng., Univ. of Cambridge Cambridge, Cambridge, UK
Abstract :
This paper reports a detailed analysis of the effect of local lifetime killing (LLK) within the drift region on the reverse recovery (RR) characteristics and on-state performance of 600V Silicon PiN diodes. The paper also discusses the influence of the measurement circuit on the reverse recovery of the high voltage diodes and it proposes a simple and effective mix-mode simulation tool for an accurate assessment of the diode performance in reverse recovery mode.
Keywords :
p-i-n diodes; reliability; LLK; PiN diode; RR characteristics; drift region; high-voltage diodes; local lifetime engineering; local lifetime killing; measurement circuit; mix-mode simulation tool; reverse recovery characteristics; reverse recovery mode; voltage 600 V; Anodes; Cathodes; Integrated circuit modeling; Oscillators; PIN photodiodes; Plasmas; Switching circuits;
Conference_Titel :
Semiconductor Conference (CAS), 2013 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4673-5670-1
Electronic_ISBN :
1545-827X
DOI :
10.1109/SMICND.2013.6688669
