DocumentCode :
657357
Title :
Modeling of light-emitting diode with top p-electrode patterned as a mesh
Author :
Khmyrova, Irina ; Hasegawa, T. ; Tomioka, Satoshi ; Watanabe, N. ; Kholopova, Julia ; Kovalchuk, Alon ; Polushkin, Evgeny ; Zernlyakov, Valery ; Kozlov, D. ; Shestakova, Elena ; Shapoval, Sergei
Author_Institution :
Univ. of Aizu, Aizu-Wakamatsu, Japan
Volume :
2
fYear :
2013
fDate :
14-16 Oct. 2013
Firstpage :
255
Lastpage :
258
Abstract :
Light-emitting diodes (LEDs) with patterned metal electrode to the top p-semiconductor layer resulting in enhanced light extraction are studied. Analytical model which includes an efficient procedure for numerical calculation of light extraction under nonuniform current injection caused by contact patterning is developed and used for modeling of two-dimensional spatial distributions of potential, injected current and output optical power.
Keywords :
light emitting diodes; LED; contact patterning; enhanced light extraction; injected current; light-emitting diode modeling; nonuniform current injection; numerical calculation; output optical power; patterned metal electrode; top p-electrode; top p-semiconductor layer; two-dimensional spatial distributions; Adaptive optics; Electric potential; Electrodes; Graphical models; Light emitting diodes; Metals; Numerical models;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2013 International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4673-5670-1
Electronic_ISBN :
1545-827X
Type :
conf
DOI :
10.1109/SMICND.2013.6688671
Filename :
6688671
Link To Document :
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