n-ZnO channel based transparent thin film transistor: Fabrication and characterization

This paper presents the fabrication and characterization of a wide bandgap oxide based transparent thin film transistor obtained on quartz substrate. Al doped ZnO layer is used as the channel of the transistor. Optical transmission of the channel layer is around 85% in the visible range of the spectrum. Silicon oxide layer, deposited by electron beam, is the gate insulator. Indium tin oxide - ITO is used as source, drain contacts and gate electrode. ITO was deposited by DC sputtering. From the electrical characterization of the transistor structure results that transistor working regime is not influenced when exposed to visible and IR radiation but only in UV exposure conditions.