DocumentCode
657366
Title
A method for reducing MOSFET high side power switch turn-on time
Author
Puscasu, Razvan ; Creosteanu, Laurentiu ; Brezeanu, G.
Author_Institution
ON Semicond. Bucharest, Bucharest, Romania
Volume
2
fYear
2013
fDate
14-16 Oct. 2013
Firstpage
307
Lastpage
310
Abstract
A novel method for reducing the turn-on time of a high side MOSFET power switch is presented. By discharging a loaded capacitor into the gate of the power switch, an important reduction of the turn-on time has been obtained. This driving method is compared with the classical case in which the gate is charged only by the charge pump block.
Keywords
capacitors; charge pump circuits; field effect transistor switches; power MOSFET; MOSFET high-side power switch turn-on time reduction; charge pump block; driving method; loaded capacitor discharging; Capacitors; Charge pumps; Logic gates; MOSFET; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2013 International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4673-5670-1
Electronic_ISBN
1545-827X
Type
conf
DOI
10.1109/SMICND.2013.6688684
Filename
6688684
Link To Document