• DocumentCode
    657369
  • Title

    Lateral MEMS square plate resonator post-process nano gap creation method and study

  • Author

    Kuppireddi, Srinivasa Reddy ; Soasen, Oddvar

  • Author_Institution
    Dept. of Inf., Univ. of Oslo, Oslo, Norway
  • Volume
    2
  • fYear
    2013
  • fDate
    14-16 Oct. 2013
  • Firstpage
    319
  • Lastpage
    322
  • Abstract
    This work describes a simple process method for obtaining sub-micron lateral electrode gaps for vibrating square plate resonators and the resulting advantages. A novel combined two step oxidation processes and post-process electrostatic actuation method is proposed to achieve 100nm electrode resonator gaps below the fabrication limitation given by conventional optical lithography. The structures are built of single crystal silicon using silicon-on-insulator wafers without complex process steps. The process sequence and simulation results for submicron electrostatic gaps are reported.
  • Keywords
    electrostatic actuators; microfabrication; micromechanical resonators; oxidation; photolithography; silicon-on-insulator; conventional optical lithography; electrode resonator gaps; fabrication limitation; lateral MEMS square plate resonator post-process nanogap creation method; post-process electrostatic actuation method; process sequence; silicon-on-insulator wafers; single-crystal silicon; size 100 nm; square plate resonator vibration; submicron electrostatic gaps; submicron lateral electrode gaps; two-step oxidation process; Electrodes; Erbium; Lithography; Optical resonators; Oxidation; Resistance; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2013 International
  • Conference_Location
    Sinaia
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4673-5670-1
  • Electronic_ISBN
    1545-827X
  • Type

    conf

  • DOI
    10.1109/SMICND.2013.6688687
  • Filename
    6688687