DocumentCode
657369
Title
Lateral MEMS square plate resonator post-process nano gap creation method and study
Author
Kuppireddi, Srinivasa Reddy ; Soasen, Oddvar
Author_Institution
Dept. of Inf., Univ. of Oslo, Oslo, Norway
Volume
2
fYear
2013
fDate
14-16 Oct. 2013
Firstpage
319
Lastpage
322
Abstract
This work describes a simple process method for obtaining sub-micron lateral electrode gaps for vibrating square plate resonators and the resulting advantages. A novel combined two step oxidation processes and post-process electrostatic actuation method is proposed to achieve 100nm electrode resonator gaps below the fabrication limitation given by conventional optical lithography. The structures are built of single crystal silicon using silicon-on-insulator wafers without complex process steps. The process sequence and simulation results for submicron electrostatic gaps are reported.
Keywords
electrostatic actuators; microfabrication; micromechanical resonators; oxidation; photolithography; silicon-on-insulator; conventional optical lithography; electrode resonator gaps; fabrication limitation; lateral MEMS square plate resonator post-process nanogap creation method; post-process electrostatic actuation method; process sequence; silicon-on-insulator wafers; single-crystal silicon; size 100 nm; square plate resonator vibration; submicron electrostatic gaps; submicron lateral electrode gaps; two-step oxidation process; Electrodes; Erbium; Lithography; Optical resonators; Oxidation; Resistance; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2013 International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4673-5670-1
Electronic_ISBN
1545-827X
Type
conf
DOI
10.1109/SMICND.2013.6688687
Filename
6688687
Link To Document