Title :
Highly Reliable Resistive Switching Without an Initial Forming Operation by Defect Engineering
Author :
Sangheon Lee ; Daeseok Lee ; Jiyong Woo ; Euijun Cha ; Jaesung Park ; Jeonghwan Song ; Kibong Moon ; Yunmo Koo ; Attari, Behnoush ; Tamanna, Nusrat ; Haque, M.S. ; Hyunsang Hwang
Author_Institution :
Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
The effects of stack and defect engineering of metal-oxide layers on resistive switching uniformity were investigated to obtain resistive random access memory (ReRAM) with excellent switching reliability. Uniform switching, parameters, such as set voltage (Vset), reset voltage (Vreset), low-resistance state, high-resistance state, and retention characteristics, were significantly improved by stack and defect engineering. Furthermore, the initial forming operation, which is a nuisance, was removed to realize cross-point ReRAM.
Keywords :
integrated circuit reliability; random-access storage; cross-point ReRAM; defect engineering; high-resistance state; highly-reliable resistive switching; initial forming operation; low-resistance state; metal-oxide layers; reset voltage; resistive random access memory; resistive switching uniformity; retention characteristics; set voltage; stack effect; switching reliability; Annealing; Hafnium compounds; Nonvolatile memory; Random access memory; Reliability engineering; Defect engineering; reliability; resistive switching; retention;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2284916
