Research and implementation of 150W SiC internally match and power combiner at S band

Author

Gang Chen ; Shichang Zhong ; Yuchao Li ; Song Bai

Author_Institution

Sci. & Technol. on Monolithic Integrated Circuits & Modules Lab., Nanjing, China

fYear

2013

fDate

29-31 Oct. 2013

Firstpage

664

Lastpage

667

Abstract

As one of the third generation semiconductor materials, SiC has many advantages, such as high-power, high gate-drain breakdown voltage, heat stability and anti-radiation ability. So it is of high value for study and application prospect. This paper bases on 20mm SiC MESFET which is made by NEDI, through internally match circuit and power combiner technology, designs a power module. The power module output power has 150W with the gain is 9dB at S-band 2.8GHz under a pulse condition of 100us pulse width and 10% duty cycle.

Keywords

UHF field effect transistors; electric breakdown; monolithic integrated circuits; power MESFET; S Band; SiC; antiradiation ability; bandwidth 2.8 GHz; gain 9 dB; heat stability; high gate-drain breakdown voltage; high-power breakdown voltage; power 150 W; silicon carbide MESFET; silicon carbide internally match combiner; silicon carbide internally power combiner; third generation semiconductor materials; Integrated circuit modeling; Logic gates; MESFETs; Materials; Power combiners; Power generation; Silicon carbide; Internally Match Circuit; Power Combiner; SiC MESFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications (MAPE), 2013 IEEE 5th International Symposium on

Conference_Location

Chengdu

Print_ISBN

978-1-4673-6077-7

Type

conf

DOI

10.1109/MAPE.2013.6689928

Filename

6689928