Title :
107W CW SiC MESFET with 48.1% PAE
Author :
Yonghong Tao ; Song Bai
Author_Institution :
Sci. & Technol. on Monolithic Integrated Circuits & Modules Lab., Nanjing Electron. Devices Inst., Nanjing, China
Abstract :
In the paper, 30 mm high-power SiC MESFETs have been fabricated. By load-pull testing at 1.5 GHz and 48 V drain to source voltage, packaged 2×30 mm SiC MESFET transistors were demonstrated with output power higher than 107 W with 48.1% PAE, and the gain was 10.3 dB under continuous wave RF operation. Small gate periphery devices of 1 mm SiC MESFET exhibited 35 dBm output power with more than 55% PAE, and the gain was 12.3 dB under continuous wave RF operation at 1.5 GHz and 48 V drain to source voltage.
Keywords :
Schottky gate field effect transistors; elemental semiconductors; semiconductor device testing; silicon compounds; SiC; continuous wave RF operation; frequency 1.5 GHz; gate periphery devices; high-power MESFET transistors; load-pull testing; power 107 W; voltage 48 V; Gain; Logic gates; MESFETs; Power generation; Radio frequency; Silicon carbide; CW; MESFET; SiC; load-pull;
Conference_Titel :
Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications (MAPE), 2013 IEEE 5th International Symposium on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4673-6077-7
DOI :
10.1109/MAPE.2013.6689931
