Back-End-of-Line Defect Analysis for Rnv8T Nonvolatile SRAM

Author

Bing-Chuan Bai ; Chun-Lung Hsu ; Ming-Hsueh Wu ; Chen-An Chen ; Yee-Wen Chen ; Kun-Lun Luo ; Liang-Chia Cheng ; Li, James C. M.

Author_Institution

Inf. & Commun. Res. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

2013

fDate

18-21 Nov. 2013

Firstpage

123

Lastpage

127

Abstract

Rnv8T nonvolatile SRAM combines conventional SRAM and resistive RAM to provide both fast access speed and data retention. Traditional test methods for conventional SRAM or resistive RAM are not suitable for nonvolatile SRAM. This paper analyzes the defective behavior of the Rnv8T nonvolatile SRAM based on defect injection and simulation. Simulation results showed that the inject defects caused stuck-at faults and transition faults which escaped from conventional March tests. Based-on the defective behavior and circuit operations, a straight forward test algorithm is proposed to detect the escaped faults.

Keywords

SRAM chips; fault diagnosis; integrated circuit testing; logic testing; memristors; Rnv8T nonvolatile SRAM; back-end-of-line defect analysis; circuit operation; conventional SRAM; defective behavior; resistive RAM; straight forward test algorithm; stuck-at faults; transition faults; Circuit faults; Integrated circuit modeling; Memristors; Nonvolatile memory; Random access memory; Resistance; Testing; Nonvolatile SRAM; Rnv8T; defect analysis; fault modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Test Symposium (ATS), 2013 22nd Asian

Conference_Location

Jiaosi Township

ISSN

1081-7735

Type

conf

DOI

10.1109/ATS.2013.32

Filename

6690628