Title :
A Stochastic Model for NBTI-Induced LSI Degradation in Field
Author :
Sato, Yuuki ; Kajihara, Seiji
Author_Institution :
Kyushu Inst. of Technol., Japan Sci. & Technol. Agency, Iizuka, Japan
Abstract :
Electronic systems that consist of various LSIs require very high reliability in field, however, physical degradation phenomena such as NBTI (Negative Bias Temperature Instability) make it difficult to keep reliability in field only by conventional manufacturing-based LSI testing. This paper proposes a stochastic model for NBTI-induced degradation in field and analyzes the effects of parameters that affect LSI failure rate by simulation. Quantitative discussions show a guideline for reliable design and test.
Keywords :
integrated circuit modelling; large scale integration; negative bias temperature instability; stochastic processes; LSI failure rate; NBTI-induced LSI degradation; electronic systems; manufacturing-based LSI testing; negative bias temperature instability; physical degradation phenomena; stochastic model; Cavity resonators; Laser mode locking; Laser noise; Vertical cavity surface emitting lasers; NBTI; degradation; field; test;
Conference_Titel :
Test Symposium (ATS), 2013 22nd Asian
Conference_Location :
Jiaosi Township
DOI :
10.1109/ATS.2013.42
