Dynamic bootstrap voltage technique for high efficiency buck converter in universal serial bus power device supplying system

Author

Wei-Chung Chen ; Ke-Horng Chen ; Chin-Long Wey ; Ying-Hsi Lin ; Tsung-Yen Tsai ; Chen-Chih Huang ; Chao-Cheng Lee

Author_Institution

Inst. of Electr. Control Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2013

fDate

11-13 Nov. 2013

Firstpage

165

Lastpage

168

Abstract

For high power universal serial bus (USB) devices, the dynamic bootstrap voltage (DBV) technique is proposed to keep high efficiency over a wide load range, including light and heavy loads. Besides, the silicon area of power management of the system-on-a-chip (Soc) can be effectively reduced to 50% of conventional design with P-type high-side power MOSFET. The test chip fabricated in 0.25μm CMOS process shows 92% peak efficiency from 1mA to 1A. The maximum driving current is higher than 3A with 88 % efficiency. Compared to that without the DBV technique, the efficiency is improved about 28%.

Keywords

CMOS integrated circuits; peripheral interfaces; power MOSFET; power convertors; system-on-chip; CMOS process; DBV technique; P-type high-side power MOSFET; SoC; buck converter; design; dynamic bootstrap voltage technique; power management; silicon area; size 0.25 mum; system-on-a-chip; universal serial bus power device supplying system; Capacitance; MOSFET; Silicon; Switching loss; System-on-chip; Threshold voltage; Universal Serial Bus; dual N-type MOSFETs; dynamic bootstrap capacitance; light-load efficiency;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference (A-SSCC), 2013 IEEE Asian

Conference_Location

Singapore

Print_ISBN

978-1-4799-0277-4

Type

conf

DOI

10.1109/ASSCC.2013.6691008

Filename

6691008