• DocumentCode
    658901
  • Title

    A time-domain smart temperature sensor without an explicit bandgap reference in SOI CMOS operating up to 225°C

  • Author

    Pathrose, Jerrin ; Zou, L. ; Chai, Kevin T. C. ; Minkyu Je ; Yong Ping Xu

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
  • fYear
    2013
  • fDate
    11-13 Nov. 2013
  • Firstpage
    173
  • Lastpage
    176
  • Abstract
    This paper presents a smart temperature sensor operating over a wide temperature range from 25°C-225°C. The proposed smart temperature sensor eliminates the explicit bandgap reference and only requires the ratio of two diode voltages to obtain ratiometric temperature measurements. The temperature sensor is implemented with a simple time-domain architecture, resulting in low power consumption and small chip area. Fabricated in a PDSOI CMOS process, the proposed smart temperature sensor achieves an accuracy of 2°C over 25°C-225°C and consumes only 25-μA current under a 4.5-V supply with a chip area of 0.45mm2.
  • Keywords
    CMOS integrated circuits; intelligent sensors; silicon-on-insulator; temperature measurement; temperature sensors; PDSOI CMOS process; current 25 muA; explicit bandgap reference; low power consumption; ratiometric temperature measurement; size 0.45 mm; small chip area; temperature 25 C to 225 C; time domain architecture; time domain smart temperature sensor; two diode voltage; voltage 4.5 V; CMOS integrated circuits; Calibration; Photonic band gap; Temperature distribution; Temperature measurement; Temperature sensors; Time-domain analysis; Bandgap Reference; High Temperature Electronics; Ratiometric Measurement; Smart temperature sensor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference (A-SSCC), 2013 IEEE Asian
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-0277-4
  • Type

    conf

  • DOI
    10.1109/ASSCC.2013.6691010
  • Filename
    6691010