Title :
Simulation Study of a 3-D Device Integrating FinFET and UTBFET
Author :
Fahad, Hossain M. ; Chenming Hu ; Hussain, M.M.
Author_Institution :
Div. of Comput., King Abdullah Univ. of Sci. & Technol., Thuwal, Saudi Arabia
Abstract :
By integrating 3-D nonplanar fins and 2-D ultrathin bodies, wavy FinFETs merge two formerly competing technologies on a silicon-on-insulator platform to deliver enhanced transistor performance compared with conventional trigate FinFETs with unprecedented levels of chip-area efficiency. This makes it suitable for ultralarge-scale integration high-performance logic at and beyond the 10-nm technology node.
Keywords :
MOSFET; silicon-on-insulator; 2D ultrathin bodies; 3D device simulation; 3D nonplanar fins; UTBFET; chip-area efficiency; enhanced transistor performance; silicon-on-insulator platform; trigate FinFETs; ultralarge-scale integration high-performance logic; wavy FinFETs; Educational institutions; FinFETs; Logic gates; Performance evaluation; Solid modeling; 2-D ultrathin bodies (UTBs); FinFET; ultralarge-scale integration; wavy; wavy.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2372695
