DocumentCode :
659024
Title :
Methodology for standard cell compliance and detailed placement for triple patterning lithography
Author :
Bei Yu ; Xiaoqing Xu ; Jhih-Rong Gao ; Pan, David Z.
Author_Institution :
ECE Dept., Univ. of Texas at Austin, Austin, TX, USA
fYear :
2013
fDate :
18-21 Nov. 2013
Firstpage :
349
Lastpage :
356
Abstract :
As the feature size of semiconductor process further scales to sub-16nm technology node, triple patterning lithography (TPL) has been regarded one of the most promising lithography candidates. M1 and contact layers, which are usually deployed within standard cells, are most critical and complex parts for modern digital designs. Traditional design flow that ignores TPL in early stages may limit the potential to resolve all the TPL conflicts. In this paper, we propose a coherent framework, including standard cell compliance and detailed placement to enable TPL friendly design. Considering TPL constraints during early design stages, such as standard cell compliance, improves the layout decomposability. With the pre-coloring solutions of standard cells, we present a TPL aware detailed placement, where the layout decomposition and placement can be resolved simultaneously. Our experimental results show that, with negligible impact on critical path delay, our framework can resolve the conflicts much more easily, compared with the traditional physical design flow and followed layout decomposition.
Keywords :
nanolithography; nanopatterning; M1; contact layers; modern digital designs; semiconductor process; size 16 nm; standard cell compliance; triple patterning lithography; Color; Law; Layout; Libraries; Standards; Timing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design (ICCAD), 2013 IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
ISSN :
1092-3152
Type :
conf
DOI :
10.1109/ICCAD.2013.6691142
Filename :
6691142
Link To Document :
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