Title :
Design with FinFETs: Design rules, patterns, and variability
Author :
Topaloglu, Rasit O.
Author_Institution :
Semicond. R&D Center, IBM, Hopewell Junction, NY, USA
Abstract :
FinFETs have proven to be the device of choice for the next few technology generations. Consequently, design rules and limitations related to FinFETs need to be carefully understood. We present restricted and gridded design rules related to FinFETs. We also present results which indicate that a complete front-end-of-line (FEOL) and middle-of-line (MOL) of a memory with controllers can be designed from a fixed set of patterns. We also indicate sources of variations in FinFETs.
Keywords :
MOSFET; semiconductor device manufacture; FinFET; design limitations; front-end-of-line; gridded design rules; middle-of-line; FinFETs; Industries; Layout; Lithography; Materials; Performance evaluation; Routing;
Conference_Titel :
Computer-Aided Design (ICCAD), 2013 IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
DOI :
10.1109/ICCAD.2013.6691172
