DocumentCode :
65906
Title :
0.2- 
InP/GaAsSb DHBT Power Performance With 10 
and 2
Author :
Zaknoune, Mohammed ; Okada, Etienne ; Mairiaux, Estelle ; Roelens, Yannick ; Ducatteau, Damien ; Frijlink, P. ; Rocchi, M. ; Maher, Hassan
Author_Institution :
Inst. d´Electron. de Microelectron. et de Nanotechnol., Villeneuve d´Ascq, France
Volume :
35
Issue :
3
fYear :
2014
fDate :
Mar-14
Firstpage :
321
Lastpage :
323
Abstract :
We report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of 0.20 × 9.5 μm2. Biased for highest power added efficiency (PAE), an output power of 6.62 mW/μm2 (11 dBm), a power gain of 5.2 dB, and a PAE of 27.7% have been obtained. Biased for highest output power, 10.26 mW/μm2 (12.8 dBm) has been achieved without significant degradation of the PAE (25.2%) and the power gain (4.5 dB).
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; DHBT; InP-GaAsSb; double heterojunction bipolar transistors; efficiency 25 percent; efficiency 25.2 percent; efficiency 27.7 percent; frequency 95 GHz; gain 4.5 dB; gain 5.2 dB; large-signal load-pull characterization; power performance; size 0.2 mum; DH-HEMTs; Density measurement; Gain; Heterojunction bipolar transistors; Impedance; Indium phosphide; Power generation; 94 GHz; DHBT; GaAsSb/InP; load pull; power;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2014.2298251
Filename :
6716022
Link To Document :
