DocumentCode :
66079
Title :
Topology Optimization of Stressed Capacitive RF MEMS Switches
Author :
Philippine, M.A. ; Sigmund, O. ; Rebeiz, Gabriel M. ; Kenny, Thomas W.
Author_Institution :
Mech. Eng. Dept., Stanford Univ., Stanford, CA, USA
Volume :
22
Issue :
1
fYear :
2013
fDate :
Feb. 2013
Firstpage :
206
Lastpage :
215
Abstract :
Geometry design can improve a capacitive radio-frequency microelectromechanical system switch´s reliability by reducing the impacts of intrinsic biaxial stresses and stress gradients on the switch´s membrane. Intrinsic biaxial stresses cause stress stiffening, whereas stress gradients cause out-of-plane curling. We use topology optimization to systematically generate designs, by minimizing stress stiffening, minimizing curling, or minimizing stress stiffening while constraining the curling behavior. We present the corresponding problem formulations and sensitivity derivations and discuss the role of key elements in the problem formulation.
Keywords :
microswitches; capacitive radiofrequency microelectromechanical system switch reliability; curling minimization; geometry design; intrinsic biaxial stresses; sensitivity derivations; stress gradients; stress stiffening minimization; stressed capacitive RF MEMS switches; switch membrane; topology optimization; Optimization; Radio frequency; Sensitivity; Solids; Stress; Switches; Topology; Geometry design; intrinsic stress; mechanical design; radio-frequency microelectromechanical systems (RF MEMS); stress gradient; topology optimization;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2012.2224640
Filename :
6353106
Link To Document :
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